The study in lengthened photoluminescent lifetime of the silicon-implanted borosilicate glass from 1.7 ns to 2.8 ns after low-temperature annealing reveals that the decrease in NBOHC defect density with activation energy of 2.63 eV is up to one order of magnitude.
Continuous-wave and time-resolved photoluminescence analysis of defect density evolution in silicon implanted borosilicate glass
01.01.2003
24596 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
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