The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.


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    Title :

    Optical study on the coupled GaAsSb/GaAs double quantum wells


    Contributors:
    Jiang, D.S. (author) / Liang, X.G. (author) / Chang, K. (author) / Bian, L.F. (author) / Sun, B.Q. (author) / Wang, J.B. (author) / Johnson, S. (author) / Zhang, Y.H. (author)


    Publication date :

    2002-01-01


    Size :

    220298 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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