The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.
Optical study on the coupled GaAsSb/GaAs double quantum wells
2002-01-01
220298 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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