The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.


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    Titel :

    Optical study on the coupled GaAsSb/GaAs double quantum wells


    Beteiligte:
    Jiang, D.S. (Autor:in) / Liang, X.G. (Autor:in) / Chang, K. (Autor:in) / Bian, L.F. (Autor:in) / Sun, B.Q. (Autor:in) / Wang, J.B. (Autor:in) / Johnson, S. (Autor:in) / Zhang, Y.H. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    220298 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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