In this paper, GaAsSb/GaAs quantum wells have been studied by the conventional, time-resolved photoluminescence spectroscopy. A weak type I bandedge alignment for the GaAsSb/GaAs heterostructure has also been confirmed.


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    Titel :

    Optical properties of GaAsSb/GaAs quantum wells


    Beteiligte:
    Wang, J.-B. (Autor:in) / Vaschenko, G. (Autor:in) / Johnson, S.R. (Autor:in) / Guo, C.Z. (Autor:in) / Menoni, C.S. (Autor:in) / Zhang, Y.-H. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    122931 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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