We investigated the stress distribution induced in a GaAs layer by the lateral oxidation of an underlying AlAs layer with micro-Raman spectroscopy. Combining with the measurement of micro-photoluminescence (PL), we found smaller strain, better homogeneity and lower density of the nonradiative recombination center for oxidized GaAs-AlAs heterostructures containing a thin AlGaAs middle layer compared to that without the AlGaAs layer.


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    Title :

    Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy


    Contributors:
    Pan, Z. (author) / Zhang, Y. (author) / Du, Y. (author) / Han, H.X. (author) / Wu, R.H. (author)


    Publication date :

    1998-01-01


    Size :

    183385 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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