We investigated the stress distribution induced in a GaAs layer by the lateral oxidation of an underlying AlAs layer with micro-Raman spectroscopy. Combining with the measurement of micro-photoluminescence (PL), we found smaller strain, better homogeneity and lower density of the nonradiative recombination center for oxidized GaAs-AlAs heterostructures containing a thin AlGaAs middle layer compared to that without the AlGaAs layer.


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    Titel :

    Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy


    Beteiligte:
    Pan, Z. (Autor:in) / Zhang, Y. (Autor:in) / Du, Y. (Autor:in) / Han, H.X. (Autor:in) / Wu, R.H. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    183385 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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