This paper deals about the high spatial resolution technique of argon plasma based quantum well intermixing using Si/sub 3/N/sub 4/ as the thermal stress-induced annealing mask in InGsAs/InGaAsP laser structure.
High spatial resolution of argon plasma-based quantum well intermixing using thermal stress-induced mask in InGaAs/InGaAsP laser structure
2003-01-01
97055 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1998
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