This paper deals about the high spatial resolution technique of argon plasma based quantum well intermixing using Si/sub 3/N/sub 4/ as the thermal stress-induced annealing mask in InGsAs/InGaAsP laser structure.
High spatial resolution of argon plasma-based quantum well intermixing using thermal stress-induced mask in InGaAs/InGaAsP laser structure
01.01.2003
97055 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1998
|British Library Conference Proceedings | 2000
|