Summary form only given. Recent progress in fabrication processes toward GaInAs(P)/InP low-dimensional quantum-well structures by EBX lithography followed by wet chemical etching and a low-pressure OMVPE regrowth is presented. A CW threshold current density of 816 A/cm/sup 2/ was obtained with a Ga/sub 0.66/In/sub 0.34/As/InP tensile-strained single-quantum-well laser 30-40 nm wide and with a 70 nm periodic active region.<>
GaInAs(P)/InP ultra-fine structures: fabrication processes, quantum-wire lasers, and photonic devices
Proceedings of LEOS '93 ; 437-438
1993-01-01
144706 byte
Conference paper
Electronic Resource
English
GaInAs(P)/InP Ultra-Fine Structures: Fabrication Processes Quantum-Wire Lasers, and Photonic Devices
British Library Conference Proceedings | 1993
|British Library Online Contents | 1993
|Hole capture rate of GaInAs/InP strained quantum-well lasers
British Library Online Contents | 1994
|High Speed Ultra-Low Chirp 1.55 m GaInAs/AlGaInAs MQW BRS DFB Lasers
British Library Conference Proceedings | 1992
|Fabrication and Physics of Microcavity Quantum Wire Lasers
British Library Conference Proceedings | 1994
|