Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth


    Contributors:
    Yi-Jen Chiu (author) / Meischer, S.B. (author) / Bowers, J.E. (author)


    Publication date :

    1997-01-01


    Size :

    126197 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low-temperature Grown GaAs Traveling Wave PIN Photodetector with High Bandwidth

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm

    Kian-Giap Gan, / Jin-Wei Shi, / Yi -Jen Chiu, et al. | IEEE | 2002


    Self-Aligned MSM Low-Temperature-Grown GaAs Traveling Wave Photodetector for 810 nm and 1230 nm

    Gan, K. G. / Chiu, Y. J. / Bowers, J. E. et al. | British Library Conference Proceedings | 2001


    GaAs-based long-wavelength traveling-wave photodetector [4078-80]

    Shi, J.-W. / Sun, C.-K. / Yang, Y.-J. et al. | British Library Conference Proceedings | 2000


    Effect of carrier transit time on the bandwidth of traveling-wave photodetector

    Moon, Y. T. / Choi, W. K. / Kim, D. G. et al. | British Library Online Contents | 2007