Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures.
Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth
01.01.1997
126197 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low-temperature Grown GaAs Traveling Wave PIN Photodetector with High Bandwidth
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