Traveling wave photodetectors (TWPD) are promising devices for high bandwidth and high efficiency. In this paper, electro-optic sampling measurements of this novel self-aligned metal-semiconductor-metal TWPD under different biases and pumping levels are performed at a wavelength of 810 nm and the electrical sampling measurements are performed at a wavelength of 1230 nm.


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    Titel :

    Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm


    Beteiligte:
    Kian-Giap Gan, (Autor:in) / Jin-Wei Shi, (Autor:in) / Yi -Jen Chiu, (Autor:in) / Chi-Kuang Sun, (Autor:in) / Bowers, J.E. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    202474 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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