In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.


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    Title :

    Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors




    Publication date :

    2010-09-01


    Size :

    806564 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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