In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors




    Erscheinungsdatum :

    01.09.2010


    Format / Umfang :

    806564 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Damascence-Gate Thin Film Transistors with Ultra-Thin Gate Dielectrics

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Organic Thin Film Transistors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Organic thin film transistors

    Jackson, T. | IEEE | 1997


    A Multilayered Thin Film Insulator for Harsh Environments

    Wrbanek, John / Fralick, Gustave / Blaha, Charles et al. | AIAA | 2002