A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.


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    Title :

    Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding


    Contributors:
    Okuno, Y.L. (author) / Geske, J. (author) / Yi-Jen Chiu, (author) / DenBaars, S.P. (author) / Bowers, J.E. (author)


    Publication date :

    2002-01-01


    Size :

    122817 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English