A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.
Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
2002-01-01
122817 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2002
|British Library Conference Proceedings | 2004
|Dual-Wavelength Vertical-Cavity Surface-Emitting Laser Arrays Fabricated by Nonplanar Wafer Bonding
British Library Conference Proceedings | 2002
|