Semiconductor lasers and amplifiers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. Operation these large-area devices requires epitaxial material with excellent uniformity. GaAs-based devices have been well demonstrated and we have recently reported InGaAsP/InP tapered lasers and amplifiers that operate at /spl lambda/=1.3 /spl mu/m. In this paper, the development of 1.5-/spl mu/m InGaAsP/InP quantum well material suitable for this type of device is discussed and initial results on high power tapered lasers with near-diffraction limited beam widths fabricated in this material are presented.
High-power 1.5-/spl mu/m InGaAsP/InP lasers with tapered-gain-region
1997-01-01
158530 byte
Conference paper
Electronic Resource
English
High-power 1.5-m InGaAsP/InP Lasers with a Tapered-gain-region
British Library Conference Proceedings | 1997
|Tapered thickness waveguide InGaAsP/InP BH MQW lasers
IEEE | 1995
|Tapered Thickness Waveguide InGaAsP/InP BH MQW Lasers
British Library Conference Proceedings | 1995
|InGaAsP/InP Gain-Levered Tunable Lasers
British Library Conference Proceedings | 2004
|InGaAsP/InP gain-levered tunable lasers
IEEE | 2004
|