Semiconductor lasers and amplifiers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. Operation these large-area devices requires epitaxial material with excellent uniformity. GaAs-based devices have been well demonstrated and we have recently reported InGaAsP/InP tapered lasers and amplifiers that operate at /spl lambda/=1.3 /spl mu/m. In this paper, the development of 1.5-/spl mu/m InGaAsP/InP quantum well material suitable for this type of device is discussed and initial results on high power tapered lasers with near-diffraction limited beam widths fabricated in this material are presented.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High-power 1.5-/spl mu/m InGaAsP/InP lasers with tapered-gain-region


    Contributors:


    Publication date :

    1997-01-01


    Size :

    158530 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High-power 1.5-m InGaAsP/InP Lasers with a Tapered-gain-region

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Tapered thickness waveguide InGaAsP/InP BH MQW lasers

    Soda, H. / Kobayashi, H. / Yamamoto, T. et al. | IEEE | 1995


    Tapered Thickness Waveguide InGaAsP/InP BH MQW Lasers

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    InGaAsP/InP Gain-Levered Tunable Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004


    InGaAsP/InP gain-levered tunable lasers

    Huthinson, J.M. / Johannson, L.A. / Getty, J.T. et al. | IEEE | 2004