Semiconductor lasers and amplifiers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. Operation these large-area devices requires epitaxial material with excellent uniformity. GaAs-based devices have been well demonstrated and we have recently reported InGaAsP/InP tapered lasers and amplifiers that operate at /spl lambda/=1.3 /spl mu/m. In this paper, the development of 1.5-/spl mu/m InGaAsP/InP quantum well material suitable for this type of device is discussed and initial results on high power tapered lasers with near-diffraction limited beam widths fabricated in this material are presented.


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    Titel :

    High-power 1.5-/spl mu/m InGaAsP/InP lasers with tapered-gain-region


    Beteiligte:
    Donnelly, J.P. (Autor:in) / Walpole, J.N. (Autor:in) / Groves, S.H. (Autor:in) / Bailey, R.J. (Autor:in) / Missaggia, L.J. (Autor:in) / Napoleone, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    158530 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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