Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula /spl omega//sub p/=(ne/sup 2//m*/spl epsiv/)/sup 1/2/ where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The desired frequency can be controlled by changing the number of electrons n via the doping concentration of the material. Another possibility to determine the emission frequency /spl omega//sub p/ is to change the effective mass m* of the electrons. This can be accomplished by placing the electrons in the periodic potential of a superlattice. We study the GaAs/AlGaAs heterostructures which are three superlattices.


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    Title :

    THz emission of coherent plasmons in semiconductor superlattices


    Contributors:


    Publication date :

    1999-01-01


    Size :

    221179 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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