Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula /spl omega//sub p/=(ne/sup 2//m*/spl epsiv/)/sup 1/2/ where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The desired frequency can be controlled by changing the number of electrons n via the doping concentration of the material. Another possibility to determine the emission frequency /spl omega//sub p/ is to change the effective mass m* of the electrons. This can be accomplished by placing the electrons in the periodic potential of a superlattice. We study the GaAs/AlGaAs heterostructures which are three superlattices.


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    Titel :

    THz emission of coherent plasmons in semiconductor superlattices


    Beteiligte:
    Bratschitsch, R. (Autor:in) / Kersting, R. (Autor:in) / Strasser, G. (Autor:in) / Unterrainer, K. (Autor:in) / Fischler, W. (Autor:in) / Hopfel, R.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    221179 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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