Summary form only given. The numerical investigations are based on a microscopic many-body theory which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of homogeneous electric fields applied in the growth direction. The THz-emission due to the field-driven dynamics of photoexcited carriers is investigated for the combined action of static and alternating fields. The applied field is written as F(t)=F/sub 0/+F/sub 1/ cos(/spl omega//sub L/t). For such a driving field it was shown within a simple model that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon-assisted tunneling between Wannier-Stark states. It is shown that the THz-emission spectroscopy gives direct access to transport in this regime.
THz emission from photoexcited semiconductor superlattices with applied AC and DC electric fields
01.01.1999
145897 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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