Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.


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    Title :

    GaN-based technology for MQW modulating retro-reflectors operating in the visible and ultraviolet spectral ranges


    Contributors:
    Rivera, C (author) / Cabrero, J F (author) / Munuera, P (author) / Aragon, F (author)


    Publication date :

    2011-05-01


    Size :

    509900 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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