Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    GaN-based technology for MQW modulating retro-reflectors operating in the visible and ultraviolet spectral ranges


    Beteiligte:
    Rivera, C (Autor:in) / Cabrero, J F (Autor:in) / Munuera, P (Autor:in) / Aragon, F (Autor:in)


    Erscheinungsdatum :

    01.05.2011


    Format / Umfang :

    509900 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Modulating Retro-Reflectors: Technology, Link Budgets and Applications

    A. G. Salas / J. Stupl / J. Mason | NTIS | 2012


    Modulating Retro-Reflectors: Technology, Link Budgets and Applications

    Salas, Alberto Guillen / Stupl, Jan / Mason, James | NTRS | 2012



    Laser ranging to optical retro-reflectors on the moon

    Alley, C. O. / Bender, P. / Currie, D. G. et al. | NTRS | 1969