A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face opposite to the first face, and including a p-type silicon carbide region in contact with the first face, a percentage of a first silicon atom among a plurality of silicon atoms present in a first layer as an uppermost layer being equal to or more than 90% and a site position of the first silicon atom being different from a site position of a silicon atom in a third layer from the first face and the same as a site position of a silicon atom in a fifth layer from the first face; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer including nitrogen.
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
2022-09-22
Patent
Electronic Resource
English
European Patent Office | 2024
|European Patent Office | 2024
|European Patent Office | 2023
|European Patent Office | 2023
|SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
European Patent Office | 2022
|