A semiconductor device of an embodiment includes: a first trench located in a silicon carbide layer extending in a first direction; a second trench and a third trench adjacent to each other in the first direction; n type first silicon carbide region; p type second silicon carbide region on the first silicon carbide region; n type third silicon carbide region on the second silicon carbide region; p type fourth silicon carbide region between the first silicon carbide region and the second trench; p type fifth silicon carbide region between the first silicon carbide region and the third trench; p type sixth silicon carbide region shallower than the second trench between the second trench and the third trench and having a p type impurity concentration higher than that of the second silicon carbide region; a gate electrode in the first trench; a first electrode, and a second electrode.


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    Title :

    SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR


    Contributors:

    Publication date :

    2022-01-13


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    English


    Classification :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / B66B Aufzüge , ELEVATORS / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen



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