A semiconductor component (10) comprising a substrate and at least two temperature measuring elements (20, 22) is described. The two temperature measuring elements (20, 22) are arranged on the bare die (11) of the semiconductor component (10) at different positions within the semiconductor component (10). In particular, one temperature measuring element (20) can be arranged in an active region (14) and one temperature measuring element (22) can be arranged in a passive region (16) of the semiconductor component (10). The temperature measuring elements (20, 22) measure two different temperatures Tj, Tsense, with the aid of which the current IDS through the semiconductor component (10) can then be calculated. The semiconductor component may be a power MOSFET (18). Furthermore, a method for determining a current IDS flowing through a semiconductor component (10) is described, wherein two temperatures measured at different locations of the semiconductor component (10) are used. The semiconductor component (10) described and the method described are suitable for example for use in a control unit for a vehicle.


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    Title :

    HALBLEITERBAUELEMENT MIT EINEM ERSTEN TEMPERATURMESSELEMENT SOWIE VERFAHREN ZUM BESTIMMEN EINES DURCH EIN HALBLEITERBAUELEMENT FLIESSENDEN STROMES


    Additional title:

    SEMICONDUCTOR COMPONENT COMPRISING A FIRST TEMPERATURE MEASURING ELEMENT AND METHOD FOR DETERMINING A CURRENT FLOWING THROUGH A SEMICONDUCTOR COMPONENT
    COMPOSANT SEMI-CONDUCTEUR AVEC UN PREMIER ÉLÉMENT DE MESURE DE TEMPÉRATURES AINSI QUE PROCÉDÉ DE DÉTERMINATION D'UN COURANT TRAVERSANT UN COMPOSANT SEMI-CONDUCTEUR


    Contributors:

    Publication date :

    2018-10-03


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    German


    Classification :

    IPC:    G01K MEASURING TEMPERATURE , Messen der Temperatur / B62D MOTOR VEHICLES , Motorfahrzeuge