The invention discloses a quick charging circuit, relates to a gallium nitride GaN third-generation semiconductor high-efficiency and high-power-density circuit, and aims to solve the problem that the physical limit of a traditional silicon material is reached and the development space is limited after the traditional silicon material is applied and developed on power supply conversion for several decades. A gallium nitride material comes from the view of people from the aspects of LED and RF at the earliest, and is developed into the application field of power devices at present. The material is suitable for high-frequency high-voltage. Gallium nitride (GaN) provides a high-performance and low-cost scheme. The development of the power supply inevitably needs a small-size high-efficiency product, and the improvement of the working frequency is an inevitable trend. The circuit topology adopts a double-half-bridge LLC, and the working frequency is as high as 500KHZ. The circuit adopts third-generation semiconductor high-power gallium nitride, the rated technical parameter is 650V/34A, and the efficiency is as high as 98%; the circuit has the advantages of high power density, small size, ultra-fast charging speed and high reliability, and is particularly suitable for a charger input power supply module in the fields of vehicle-mounted OBC, electric vehicles, high-altitude operation, material carrying vehicles and the like.
本发明公开了一种快速充电电路,涉及氮化镓GaN第三代半导体高效、高功率密度电路,传统硅材料在电源转换上应用发展几十年了,现已到达它的物理极限,发展空间有限。氮化镓材料最早是从LED及RF方面进行人们的视线,现在发展进入功率器件应用领域。适合高频高压。氮化镓GaN将提供高性能,低成本的方案。电源的发展必然需要小体积高效率产品,提高工作频率是必然趋势。电路拓扑采用双半桥LLC,工作频率高达500KHZ。本发明电路采用第三代半导体大功率氮化镓,额定技术参数650V/34A,效率高达98%;电路具有高功率密度、体积小、超快充电速度、可靠性高,特别适合车载OBC、电动车、高空作业、物料搬运车等领域充电机输入电源模块。
Quick charging circuit
一种快速充电电路
2021-05-18
Patent
Electronic Resource
Chinese
Quick charging method and device based on quick charging circuit and electronic equipment
European Patent Office | 2022
|Electric vehicle quick charging circuit and control method
European Patent Office | 2021
|