Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling ...
4H-SiC Integrated circuits for high temperature and harsh environment applications
2013-09-10
TDX (Tesis Doctorals en Xarxa)
Theses
Electronic Resource
English
4H-SiC Integrated circuits for high temperature and harsh environment applications
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