Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 μm) bandgaps exhibit external quantum efficiencies of 59% at 2 μm, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 μm in 8-μm-wide p-InGaAsSb layers and hole diffusion lengths of 3 μm in 6-μm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.
The quantum efficiency of InGaAsSb thermophotovoltaic diodes
Space technology and applications international forum - 1998 ; 1998 ; Albuquerque,New Mexico (USA)
AIP Conference Proceedings ; 420 , 1 ; 1394-1399
1998-01-15
6 pages
Conference paper
Electronic Resource
English
The Quantum Efficiency of InGaAsSb Thermophotovoltaic Diodes
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