Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 μm) bandgaps exhibit external quantum efficiencies of 59% at 2 μm, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 μm in 8-μm-wide p-InGaAsSb layers and hole diffusion lengths of 3 μm in 6-μm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.


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    Title :

    The quantum efficiency of InGaAsSb thermophotovoltaic diodes



    Conference:

    Space technology and applications international forum - 1998 ; 1998 ; Albuquerque,New Mexico (USA)


    Published in:

    AIP Conference Proceedings ; 420 , 1 ; 1394-1399


    Publication date :

    1998-01-15


    Size :

    6 pages





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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