Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 μm) bandgaps exhibit external quantum efficiencies of 59% at 2 μm, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 μm in 8-μm-wide p-InGaAsSb layers and hole diffusion lengths of 3 μm in 6-μm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.


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    Titel :

    The quantum efficiency of InGaAsSb thermophotovoltaic diodes


    Beteiligte:
    Martinelli, Ramon U. (Autor:in) / Garbuzov, Dmitri Z. (Autor:in) / Lee, Hao (Autor:in) / Morris, Nancy (Autor:in) / Odubanjo, Tunde (Autor:in) / Taylor, Gordon C. (Autor:in) / Connolly, John C. (Autor:in) / El-Genk, Mohamed S. (Herausgeber:in) / Bragg, Mary J. (Herausgeber:in)

    Kongress:

    Space technology and applications international forum - 1998 ; 1998 ; Albuquerque,New Mexico (USA)


    Erschienen in:

    AIP Conference Proceedings ; 420 , 1 ; 1394-1399


    Erscheinungsdatum :

    15.01.1998


    Format / Umfang :

    6 pages





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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