Compensated silicon, carrier lifetime, boron-oxygen defect. - Kompensiertes Silicium, Ladungsträgerlebensdauer, Bor-Sauerstoff-Defekt


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    Title :

    Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation


    Contributors:
    Lim, Bianca (author)

    Publication date :

    2012


    Size :

    Online-Ressource (131 S., 25,5 MB)


    Remarks:

    Digital preservation by Technische Informationsbibliothek (TIB) / Leibniz-Informationszentrum Technik und Naturwissenschaften und Universitätsbibliothek


    Type of media :

    Theses


    Type of material :

    Electronic Resource


    Language :

    English , German



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher