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    Title :

    The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells


    Contributors:
    Liu, S.T. (author) / Yang, J. (author) / Zhao, D.G. (author) / Jiang, D.S. (author) / Liang, F. (author) / Chen, P. (author) / Zhu, J.J. (author) / Liu, Z.S. (author) / Liu, W. (author) / Xing, Y. (author)

    Published in:

    Optical materials ; 86 ; 460-463


    Publication date :

    2018-01-01


    Size :

    4 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    Unknown


    Classification :

    DDC:    535



    Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD

    Keller, S. / Mishra, U.K. / DenBaars, S.P. | IEEE | 1996


    Growth of InGaN Quantum Wells and InGaN/GaN Quantum Well LEDs by MOCVD

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Optical properties of type-II InGaN/GaAsN/GaN quantum wells

    Park, S. H. / Lee, Y. T. / Park, J. | British Library Online Contents | 2009


    Optical properties of type-II InGaN/GaAsN/GaN quantum wells

    Park, S. H. / Lee, Y. T. / Park, J. | British Library Online Contents | 2009


    Accurate modelling of InGaN quantum wells

    Wenzel, H. | British Library Online Contents | 2006