Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes
OPTICAL AND QUANTUM ELECTRONICS ; 47 , 8 ; 2689-2696
2015-01-01
8 pages
Article (Journal)
English
DDC: | 537.5 |
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Numerical Simulation of Avalanche Breakdown within InP-InGaAs SAGCM Standoff Avalanche Photodiodes
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