High Current (>1000A), High Temperature (>200^oC) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems
Conference, Power systems ; 2012 ; Phoenix, AZ
2012-01-01
2209 pages
SAE 2012-01-2155 - 2012-01-2242 held with gaps
Conference paper
English
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New silicon carbide reinforced aluminium composites as baseplates for high performance power modules
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