High Current (>1000A), High Temperature (>200^oC) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems
Conference, Power systems ; 2012 ; Phoenix, AZ
01.01.2012
2209 pages
SAE 2012-01-2155 - 2012-01-2242 held with gaps
Aufsatz (Konferenz)
Englisch
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