Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)
Symposium, Rare-earth doping for optoelectronic applications ; 2005 ; San Francisco, CA
2005-01-01
6 pages
Held as part of the 2005 MRS spring meeting
Conference paper
English
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