Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    MOCVD Growth of InGaAsN QWs and 1.3 mum VCSELs


    Contributors:

    Conference:

    Annual meeting; 16th, IEEE Lasers & Electro-optics Society; LEOS 2003 ; 2003 ; Tucson, AZ



    Publication date :

    2003-01-01


    Size :

    2 pages


    Remarks:

    IEEE cat. no. 03CH37460




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    MOCVD growth of InGaAsN QWs and 1.3 /spl mu/m VCSELs

    Takeuchi, T. / Chang, Y.-L. / Leary, M. et al. | IEEE | 2003


    1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

    Murray, C.S. / Newman, F.D. / Shangzhu Sun, et al. | IEEE | 2002


    High-performance 1.3-micron InGaAsN VCSELs

    Klem, J.F. / Serkland, D.K. / Geib, K.M. | IEEE | 2001


    WY2 High-Performance 1.3-Micron InGaAsN VCSELs

    IEEE | British Library Conference Proceedings | 2001


    Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs

    Naone, R.L. / Wasinger, N.M. / Beltran, J.G. et al. | IEEE | 2004