Growth of high-quality GaN and Al~xGa~1~-~xN layers by an MOVPE technique
International conference, Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 1998 ; Zakopane; Poland
Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 3725 ; 21-24
1999-01-01
4 pages
also known as ICSSC'98; See also same shelfmark vol 3724 1999 for further papers. See also 6275.7208 vol 7 no 2 1999 for further papers
Conference paper
English
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