The selective growth technique on a mask-patterned planar substrate has attracted much attention because it enables simple integration of thickness-tapered waveguides as well as bandgap-energy control in waveguide layers. Moreover, narrow-stripe selective MOVPE enables the formation of active/passive waveguide layers without a mesa-etching process, which is an attractive approach to the fabrication of photonic devices. The paper reviews this technique, and discusses several device applications.


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    Title :

    Selective MOVPE technique and its applications for photonic devices


    Contributors:
    Sasaki, T. (author)


    Publication date :

    1999-01-01


    Size :

    176117 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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