The selective growth technique on a mask-patterned planar substrate has attracted much attention because it enables simple integration of thickness-tapered waveguides as well as bandgap-energy control in waveguide layers. Moreover, narrow-stripe selective MOVPE enables the formation of active/passive waveguide layers without a mesa-etching process, which is an attractive approach to the fabrication of photonic devices. The paper reviews this technique, and discusses several device applications.
Selective MOVPE technique and its applications for photonic devices
1999-01-01
176117 byte
Conference paper
Electronic Resource
English
Selective MOVPE Technique and Its Applications for Photonic Devices 10:30 - 11:30, Diamond II
British Library Conference Proceedings | 1999
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