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    Title :

    Growth of high-quality GaN and Al~xGa~1~-~xN layers by an MOVPE technique



    Conference:

    International conference, Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 1998 ; Zakopane; Poland



    Publication date :

    1999-01-01


    Size :

    4 pages


    Remarks:

    also known as ICSSC'98; See also same shelfmark vol 3724 1999 for further papers. See also 6275.7208 vol 7 no 2 1999 for further papers




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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