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    Title :

    High Power, Coherent InGaAsP/InP Semiconductor Laser Design Operating at 1.55 Microns (Invited)


    Contributors:

    Conference:

    International conference; 4th, Millimeter wave and far infrared science and technology ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    4 pages


    Remarks:

    Also known as ICMWFST '96; IEEE cat no 96TH6221



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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