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    Title :

    Nondestructive characterization of Ti-doped and V-doped CdTe by time-dependent charge measurement [2554-41]



    Conference:

    Conference, Growth and characterization of materials for infrared detectors 2 ; 1995 ; San Diego; CA



    Publication date :

    1995-01-01


    Size :

    4 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 2554

    DataCite | 1894


    Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials [2554-13]

    Clarke, F. W. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1995


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    Ghailane, F. / Manivannan, G. / Lessard, R. A. et al. | British Library Conference Proceedings | 1995


    Photorefractivity and holographic applications of azo-dye doped PMMA recording materials [2554-38]

    Pham, V. P. / Manivannan, G. / Lessard, R. A. et al. | British Library Conference Proceedings | 1995


    Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy [2554-30]

    Dong, M. / Ding, Z. / Tong, L. et al. | British Library Conference Proceedings | 1995