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    Title :

    Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials [2554-13]



    Conference:

    Conference, Growth and characterization of materials for infrared detectors 2 ; 1995 ; San Diego; CA



    Publication date :

    1995-01-01


    Size :

    12 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 2554

    DataCite | 1894


    Advances in infrared antimonide technology [2554-22]

    Micklethwaite, W. F. / Fines, R. / Freschi, D. J. et al. | British Library Conference Proceedings | 1995


    Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array [2554-21]

    Borenstain, S. I. / Arad, U. / Afanasyev, S. et al. | British Library Conference Proceedings | 1995


    Nondestructive characterization of Ti-doped and V-doped CdTe by time-dependent charge measurement [2554-41]

    Eiche, C. / Schwarz, R. / Joerger, W. et al. | British Library Conference Proceedings | 1995


    New process for the controlled formation of ultrathin PtSi films for infrared detector applications [2554-24]

    Torres, A. / Kolodinski, S. / Donaton, R. A. et al. | British Library Conference Proceedings | 1995