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Halbleitertechnologie
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keywords:(Halbleitertechnologie)
Normal Incidence P-Type InGaAs/InGaAlAs Strained Quantum Well Infrared Photodetector
Single steady frequency and narrow-linewidth external-cavity semiconductor laser [5188-46]
A review of the emerging SEMI standards for particle scanners [5188-48]
Laser-induced fluorescence of calcium fluoride at 193 and 157 nm excitation [5188-15]
Optical Gain and Drift Velocity of Photoexcited Carriers in MQW IR Detectors
Characterization of Ag-Sb-Te alloy and its films for phase-change optical memories [5188-27]
Optical characterization in wide spectral range by a coherent spectrophotometer [5188-05]
Characterization of polarization aberrations in liquid crystal devices (Invited Paper) [5188-01]
Localization of sub-100-nm particles on wafers with solid state detector arrays [5188-35]
Mueller matrix polarimeter in 157 nm [5188-18]
Gunn Diodes Resistance Measurements by Galvanomagnetic Method
In~1~-~xTl~xSb for Long Wave-Length Infrared Photodetectors
20m Cutoff Long-Wavelength In~xGa~1~-~xAs/GaAs Quantum-Well Infrared Photodetectors
Application of Embedded MCM Technology to Automotive Electronics
The ABC’s of Monolithic Integrated Circuits
Modeling moisture transport in UHP distribution systems
Low- and mid-spatial-frequency component measurement for aspheres [5188-37]
Advanced transmission electron microscopy for nano-optics (Invited Paper) [5188-28]
Semiconductor Capacitance-Type Accelerometer with PWM Electrostatic Servo Technique
A Novel Battery Chrager-Discharger of the Regulated-Peak-Power-Tracking-System
InGaAs/GaAs Light Emittors for Optical Interconnections
Barrier-Doped GaAs/AlGaAs Quantum Well Detector
The next step in process gas delivery: A fully integrated system
Principles of solar cells, LEDs and diodes : the role of the PN junction
Gate Recess Etch Contributions to Source Resistance
Efficiency of Grating Coupled AlGaAs/GaAs Quantum Well Infrared Detectors and Detector Arrays
Undoped Single Quantum-Well Infrared Photodetector with Unity Gain
Multilayer Homojunctions as Tunable Far Infrared Detectors
Controlling the Active Area of HgCdTe Photodiodes Using an Internal Electric Field
Modeling of Carrier Transport in Multiquantum Well Infrared Detectors
Image detection system for 157 nm using fluorescent glass [5188-16]