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Halbleitertechnologie
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keywords:(Halbleitertechnologie)
X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystals [3179-33]
VUV light-scattering measurements of substrates and thin film coatings [5188-14]
Vortex lattice pinning in a Ba~0~.~6~4K~0~.~3~6BiO~y thick film
Visible Light Emission from Ordered Nanopatterned InP Surface
Undoped Single Quantum-Well Infrared Photodetector with Unity Gain
Two-Mode InGaSb/GaSb Strained-Layer Superlattice, Infrared Photodetectors
Tuning of Energy Band Gaps in Ternary Semiconductors
Time-resolved study of luminescence properties of porous silicon in micro- and nanosecond range
Time-resolved spectroscopy of low-dimensional structures based on porous silicon [3179-07]
Thin film material on the basis of silver organoacetylide for photovisualization [3179-12]
The Synthesis and Crystallography of Some Novel ZnO Nano- and Micro-Crystals and Structures
The Study of Femto-Second Laser Induced Damage Threshold on Semi-Insulating GaAs Wafer
The Gas Sensivity Character of WO~3 Nanosized Material
The Formation of InP Ring-Shape Nanostructures on In~0~.~4~9Ga~0~.~5~1P Grown by Droplet Epitaxy
Temperature stability of p-n Cd~xHg~1~-~xTe structures formed by ion beam milling
Temperature dependence of energy bandgap of Zn~1~-~xMg~xSe strained epitaxial layers grown on GaAs
Temperature-Controlled Catalytic Growth and Photoluminescence Properties of ZnO Nanostructures
Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100)
Surface strain during homoepitaxy: growth and ion ablation of CdTe (Invited Paper)
Surface properties of In(Sb,As)
Surface and Structure of Porous Silicon Layers
Structure of the Si-SiO~2 interface
Structural studies of carbon nanotubes by wide-angle neutron scattering
Spectroscopic characterization of bacterial reaction center Langmuir-Blodgett monolayers [3179-11]
Spectral, kinetic, and electrical properties of electroluminescent thin-film cells based on ZnS:Mn
Spectral dependence of GaAIN bandgap-graded UV detector responsivity
Space-charge-perturbed currents due to continuous carrier injection [3179-52]
Single steady frequency and narrow-linewidth external-cavity semiconductor laser [5188-46]
Simulation of the early stages of thermal SiO~2 growth
Simple methods for the analysis of TL glow curves [3179-51]
Role of surface substances in excitation of porous silicon photoluminescence
RF sputtering deposition of CdTe on GaAs substrate [3179-03]
Reliable determination of wavelength dependence of thin film refractive index [5188-25]
Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substrates
Recent advances in TLM algorithms for semiconductor transport (Invited Paper) [3179-49]
Raman study of Epitaxial lateral Overgrowth of GaN on Patterned Sapphire Substrate
Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy