Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Surface strain during homoepitaxy: growth and ion ablation of CdTe (Invited Paper)



    Kongress:

    International conference, Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 1998 ; Zakopane; Poland



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    8 pages


    Anmerkungen:

    also known as ICSSC'98; See also same shelfmark vol 3724 1999 for further papers. See also 6275.7208 vol 7 no 2 1999 for further papers




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Growth of oxide thin films by laser ablation (Invited Paper) [2207-86]

    Perriere, J. / Ranno, L. / Marechal, C. et al. | British Library Conference Proceedings | 1994



    Pulsed laser ablation and deposition of quasicrystals (Invited Paper) [5147-48]

    Teghil, R. / D Alessio, L. / Santagata, A. et al. | British Library Conference Proceedings | 2003


    Excimer ablation lithography (EAL) for TFT-LCD (Invited Paper) [2992-16]

    Suzuki, K. / Matsuda, M. / Ogino, T. et al. | British Library Conference Proceedings | 1997


    Growth and characterization of -FeSi~2 thin films prepared by laser ablation method (Invited Paper) [3550-57]

    Kakemoto, H. / Makita, Y. / Sakuragi, S. et al. | British Library Conference Proceedings | 1998