Summary form only given. The conversion of CMOS/epi designs for a MIL-STD-1750A chip set to CMOS/SOS using the BITECH CAD software is discussed. CMOS/SOS circuit functionality was verified at probe and after assembly, and characterization testing verified the SOS circuits to be form, fit and functionally equivalent to the CMOS/epi material previously produced. Characterization test results show that some packaged units exceed the full military temperature/voltage range requirements. The characterization test results were further verified by user insertion testing which demonstrated that the 1750A CMOS/SOS chip set devices were direct plug-in replacements for their CMOS/epi counterparts in existing application hardware.
Conversion of the PACE1750A CMOS chip set to silicon on sapphire (for military equipment)
Die Änderung des PACE 1750A Chips in eine SOS-Technik für wehrtechnische Anwendungen
IEEE SOS/SOI Technology Conference ; 103-104
1989
2 Seiten
Aufsatz (Konferenz)
Englisch
ThR2 Ultra-Thin Silicon-on-Sapphire for Flip-Chip based CMOS/Optoelectronic Device Integration
British Library Conference Proceedings | 2001
|Deposition of Sapphire by Conversion Coating
Online Contents | 1996
Electron Beam "Writes" Silicon On Sapphire
NTRS | 1988
|Europäisches Patentamt | 2022
|