In industrial and commercial areas the demand is increasing for integrated circuits capable of operating in ambient temperatures of 150 C to 350 C. While it has become common practice in military projects to design with ICs capable of functioning over the range - 55 C to +125 C, these devices have generally been located in protective subsystems housed within larger, more complex systems. However, new applications are stretching these limits even further, and to meet these demands a new process - dielectric isolation (DI) - has been developed which, combined with proven experience in radiation hardening of ICs, has proved to be a highly successful technology.


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    Titel :

    Dielectric isolation techniques in high-temperature electronics


    Weitere Titelangaben:

    Dielektrische Isolationstechniken in der Hochtemperaturelektronik


    Beteiligte:
    Jones, G. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1983


    Format / Umfang :

    4 Seiten, 2 Quellen


    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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