Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.


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    Titel :

    Stacked Metal Silicide/Silicon Far-Infrared Detectors


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1988-12-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





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