Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.


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    Titel :

    Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers


    Beteiligte:
    Park, Jin S. (Autor:in) / Lin, True-Lon (Autor:in) / Jones, Eric (Autor:in) / Del Castillo, Hector (Autor:in) / Gunapala, Sarath (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1996-04-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch






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