Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.
Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers
NASA Tech Briefs ; 20 , 4
1996-04-01
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Englisch
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